Projekt

Daten zum Projekt

Opto-electronic and transport phenomena in narrow gap semiconductor structures for terahertz detection

Initiative: Trilaterale Partnerschaften – Kooperationsvorhaben zwischen Wissenschaftler(inne)n aus der Ukraine, Russland und Deutschland (beendet)
Bewilligung: 29.02.2016
Laufzeit: 3 Jahre

Projektinformationen

The scientific objectives of the project involve basic research in the area of terahertz optics and opto-electronics, topological insulators (TI) and semiconductor spintronics. The analysis and characterization of novel TI materials, which in turn generates an important feedback to the technologically oriented groups, is an important goal of our proposal. The combination of experience und technical skills with these new materials should open up new opportunities for probing the topological behavior of Dirac fermions. It is planned to use the nonlinear high frequency (HF) transport as a new and powerful method to access and characterize the electron spin system in TI systems, with an eye on spin opto-electronic applications. Practical goals to be achieved are the development of novel THz semiconductor detectors, in particular detectors allowing fast all-electrical room temperature detection of the radiation's polarization state. These applications are of importance for coming applications since the terahertz radiation is of importance for analytical chemistry and biology, solid state characterization as well as medical and communication applications.

Projektbeteiligte

  • Prof. Dr. Dieter Weiss

    Universität Regensburg
    Institut für Experimentelle und
    Angewandte Physik
    Regensburg

  • Dr. Sergei Dvoretskiy

    Russian Academy of Sciences
    Siberian Branch
    Rzhanov Institute of Semicomductor Physics
    Novosibirsk
    Russland

  • Dr. Joanna Gumenjuk-Sichevska

    National Academy of Sciences of Ukraine
    V.E. Lashkaryov Institute of Semiconductor Physics
    Kiev
    Ukraine

  • Prof. Dr. Fedir Sizov

    National Academy of Sciences of Ukraine
    V.Lashkaryov Institute of Semiconductor Physics
    Kyiv
    Ukraine

  • Prof. Dr. Kvon Ze Don

    Russian Academy of Sciences
    Siberian Branch
    Rzhanov Institute of Semiconductor Physics
    630090
    Novosibirsk
    Russland

  • Prof. Dr. Sergey Ganichev

    Universität Regensburg
    Institut für Experimentelle und
    Angewandte Physik
    Regensburg