Daten zum Projekt
Initiative: | Trilaterale Partnerschaften – Kooperationsvorhaben zwischen Wissenschaftler(inne)n aus der Ukraine, Russland und Deutschland |
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Bewilligung: | 29.02.2016 |
Laufzeit: | 3 Jahre |
Projektinformationen
The scientific objectives of the project involve basic research in the area of terahertz optics and opto-electronics, topological insulators (TI) and semiconductor spintronics. The analysis and characterization of novel TI materials, which in turn generates an important feedback to the technologically oriented groups, is an important goal of our proposal. The combination of experience und technical skills with these new materials should open up new opportunities for probing the topological behavior of Dirac fermions. It is planned to use the nonlinear high frequency (HF) transport as a new and powerful method to access and characterize the electron spin system in TI systems, with an eye on spin opto-electronic applications. Practical goals to be achieved are the development of novel THz semiconductor detectors, in particular detectors allowing fast all-electrical room temperature detection of the radiation's polarization state. These applications are of importance for coming applications since the terahertz radiation is of importance for analytical chemistry and biology, solid state characterization as well as medical and communication applications.
Projektbeteiligte
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Prof. Dr. Dieter Weiss
Universität Regensburg
Institut für Experimentelle und
Angewandte Physik
Regensburg
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Dr. Sergei Dvoretskiy
Russian Academy of Sciences
Siberian Branch
Rzhanov Institute of Semicomductor Physics
Novosibirsk
Russland
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Dr. Joanna Gumenjuk-Sichevska
National Academy of Sciences of Ukraine
V.E. Lashkaryov Institute of Semiconductor Physics
Kiev
Ukraine
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Prof. Dr. Fedir Sizov
National Academy of Sciences of Ukraine
V.Lashkaryov Institute of Semiconductor Physics
Kiew
Ukraine
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Prof. Dr. Kvon Ze Don
Russian Academy of Sciences
Siberian Branch
Rzhanov Institute of Semiconductor Physics
630090
Novosibirsk
Russland
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Prof. Dr. Sergey Ganichev
Universität Regensburg
Institut für Experimentelle und
Angewandte Physik
Regensburg